ON Semiconductor BSS123LT1G
BSS123LT1G
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ON Semiconductor BSS123LT1G information
Type
Parameter
Factory Lead Time
15 Weeks
Lifecycle Status
ACTIVE (Last Updated: 3 days ago)
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Cut Tape (CT)
Published
2003
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
6Ohm
Subcategory
FET General Purpose Power
Voltage - Rated DC
100V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
170mA
Reflow Temperature-Max (s)
40
Pin Count
3
Number of Elements
1
Power Dissipation-Max
225mW Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
225mW
Turn On Delay Time
20 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
6 Ω @ 100mA, 10V
Vgs(th) (Max) @ Id
2.6V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds
20pF @ 25V
Current - Continuous Drain (Id) @ 25°C
170mA Ta
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Turn-Off Delay Time
40 ns
Continuous Drain Current (ID)
170mA
Threshold Voltage
800mV
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
100V
Nominal Vgs
20 V
Height
1.01mm
Length
3.04mm
Width
1.4mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
- Datasheets :
- Environmental Information :
- PCN Design/Specification :
- PCN Assembly/Origin :
- PCN Packaging :
- RohsStatement :
BSS123LT1G Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 20pF @ 25V.This device's continuous drain current (ID) is 170mA, which represents the maximum continuous current it can conduct.A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 100V, and this device has a drainage-to-source breakdown voltage of 100VV.Its turn-off delay time is 40 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 20 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 800mV threshold voltage.In addition to reducing power consumption, this device uses drive voltage (10V).
BSS123LT1G Features
a continuous drain current (ID) of 170mA
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 40 ns
a threshold voltage of 800mV
BSS123LT1G Applications
There are a lot of ON Semiconductor BSS123LT1G applications of single MOSFETs transistors.
- LCD/LED/ PDP TV Lighting
- Battery Protection Circuit
- DC-to-DC converters
- Motor Drives and Uninterruptible Power Supples
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- AC-DC Power Supply
- Lighting
- Consumer Appliances
- Telecom 1 Sever Power Supplies
- Motor control
- ImagePart NumberManufacturerMountPackage / CaseContinuous Drain Current (ID)Current - Continuous Drain (Id) @ 25°CThreshold VoltageGate to Source Voltage (Vgs)Power DissipationPower Dissipation-MaxView Compare
BSS123LT1G
ON SemiconductorSurface Mount
TO-236-3, SC-59, SOT-23-3
170 mA
170mA (Ta)
800 mV
20 V
225 mW
225mW (Ta)
2N7002A-7Diodes IncorporatedSurface Mount
TO-236-3, SC-59, SOT-23-3
220 mA
180mA (Ta)
-
20 V
540 mW
370mW (Ta)
BSS123LT1G
VS
2N7002A-7
BSS123NH6327XTSA1Infineon TechnologiesSurface Mount
TO-236-3, SC-59, SOT-23-3
190 mA
190mA (Ta)
-
20 V
500 mW
500mW (Ta)
BSS123LT1G
VS
BSS123NH6327XTSA1
- BSS123-7-FDiodes Incorporated
Surface Mount
TO-236-3, SC-59, SOT-23-3
170 mA
170mA (Ta)
1.4 V
20 V
300 mW
300mW (Ta)
BSS123LT1G
VS
BSS123-7-F
- BSS123ON Semiconductor
Surface Mount
TO-236-3, SC-59, SOT-23-3
170 mA
170mA (Ta)
1.7 V
20 V
360 mW
360mW (Ta)
BSS123LT1G
VS
BSS123
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2.Are the ON Semiconductor's BSS123LT1G price and stock displayed on the website accurate?
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After the electronic components have passed the quality inspection of Aztec Electronics, there are generally the following five packaging forms for electronic components: Tape, Tube, Tray, Bulk and Ammo.
Tape/Reel | Tube | Tray | Bulk | Ammo |
Weave bulk chips into tapes and pack them into reels through SMD components packaging Tape Machine. Reel is the most commonly used. | When packaging, arrange the components in the same direction and put them into plastic tubes one at a time. | Choose tray package with the same specifications as the original manufacturer, put the components into the tray and use the strapping machine. | Bulk packaging means that the SMD components are freely packaged in a formed plastic box or bag. | Adhesive tape cut continuously in predetermined quantities. The cut strips are placed in boxes for safekeeping. |
Choose electronic components that are vacuum-sealed against water, dust, moisture, oxidation, corrosion, and even UV or RF pollution.
How to pack electronic components in cartons?
1. Choose the right box for your electronic components2. Use anti-static bubble film protect electronic component
3. Put it into the box, no buffer dead corner, 360-degree package.
4. Labeled as fragile to ensure that the courier knows what needs to be done with the package.
